Method for forming a capacitor in a semiconductor

专利名称：Method for forming a capacitor in a

semiconductor and a capacitor using thesame

发明人：Sang Kwon Kim申请号：US11473737申请日：20060623

公开号：US20060292811A1公开日：20061228

专利附图：

摘要：Disclosed is a capacitor and method for forming a capacitor in a semiconductor.The method includes the steps of: (a forming a lower electrode pattern on a silicon

semiconductor substrate; (b etching a portion of the lower electrode pattern to apredetermined depth to form a step in the lower electrode pattern; (c forming adielectric layer and a upper electrode layer on an entire surface of the substrateincluding the lower electrode pattern; and (e patterning the upper electrode layer andthe dielectric layer to form a upper electrode pattern and a dielectric pattern.

申请人：Sang Kwon Kim

地址：Suwon-si KR

国籍：KR

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