Vertical PMOS field effect transistor and manufact

专利名称：Vertical PMOS field effect transistor and

manufacturing method thereof

发明人：Hsin-Huei Chen,Chung-Yuan Lee申请号：US14316972申请日：20140627公开号：US09000532B2公开日：20150407

专利附图：

摘要：A PMOS field effect transistor includes a substrate, a first nitride layer, a mesastructure, two gate oxide films, a gate stack layer and a second nitride layer. The

substrate has a oxide layer and a first doping area. The first nitride layer is located on the

oxide layer. The mesa structure includes a first strained Si—Ge layer, an epitaxial Si layerand a second strained Si—Ge layer. The first strained Si—Ge layer is located on the oxidelayer and the first nitride layer. The epitaxial Si layer is located on the first strained Si—Gelayer. The second strained Si—Ge layer is located on the epitaxial Si layer. In the surfacelayer of the second strained Si—Ge layer, there is a second doping area. The two gateoxide films are located at two sides of the mesa structure.

申请人：Inotera Memories, Inc.

地址：Taoyuan County TW

国籍：TW

代理机构：Rosenberg, Klein & Lee

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