Semiconductor device having an extrinsic gettering

专利名称：Semiconductor device having an extrinsic

gettering film

发明人：Hiroshi Tomita,Mami Takahashi,Kikuo

Yamabe

申请号：US08/730322申请日：19961011公开号：US05757063A公开日：19980526

摘要：A semiconductor device includes a semiconductor substrate having first andsecond main surfaces and including a denuded zone, in which an oxygen concentration islower than that in an inner portion of the semiconductor substrate and which does notinclude a bulk microdefect, and an intrinsic gettering zone, and element region formedon the first surface of the semiconductor substrate, and an extrinsic gettering layer,made of an amorphous semiconductor material which traps a metal impurity, and formeddirectly on at least a portion of the intrinsic gettering region or the denuded zoneentirely or partially thinned of the second main surface of the semiconductor substrate.A method for manufacturing a semiconductor device includes the steps of forming anelement region on a first main surface of a semiconductor substrate having first andsecond main surfaces and having an intrinsic gettering zone, and forming an extrinsicgettering layer, made of an amorphous semiconductor material which traps a metalimpurity, directly on at least a portion of the intrinsic gettering region of the second mainsurface of the semiconductor substrate.

申请人：KABUSHIKI KAISHA TOSHIBA

代理机构：Finnegan, Henderson, Farabow, Garrett & Dunner, LP.

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