专利名称：Patterning method发明人：Hong-Ji Lee申请号：US12411169申请日：20090325公开号：US08304175B2公开日：20121106
专利附图：
摘要：A patterning method is provided. First, a material layer is formed on a substrate.Thereafter, an ashable layer is formed on the material layer. Afterwards, a patternedtransfer layer is formed on the ashable layer, wherein the patterned transfer layer has acritical dimension less than the exposure limit dimension. Further, the ashable layer is
patterned using the patterned transfer layer or a complementary layer of the patternedtransfer layer as a mask, so as to form a patterned ashable layer. The material layer isthen patterned using the patterned ashable layer as a mask.
申请人：Hong-Ji Lee
地址：Hsinchu TW
国籍：TW
代理机构：J.C. Patents
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