ZVP3310资料

ISSUE 2 󰂖 MARCH 94FEATURES*100 Volt VDS*RDS(on)=20ΩZVP3310AD G SABSOLUTE MAXIMUM RATINGS.PARAMETERDrain-Source VoltageContinuous Drain Current at Tamb=25°CPulsed Drain CurrentGate Source Voltage Power Dissipation at Tamb=25°COperating and Storage Temperature RangeSYMBOLVDSIDIDMVGSPtotTj:TstgE-LineTO92 CompatibleVALUE-100-140-1.2± 20UNITVmAAVmW°C625-55 to +150ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETERDrain-Source BreakdownVoltageGate-Source ThresholdVoltageGate-Body LeakageZero Gate Voltage DrainCurrentOn-State Drain Current(1)SYMBOLMIN.BVDSSVGS(th)IGSSIDSSID(on)-3002050501558888-100-1.5-3.520-1-50MAX.UNITCONDITIONS.VVnAµAµAID=-1mA, VGS=0VID=-1mA, VDS= VGSVGS=± 20V, VDS=0VVDS=-100V, VGS=0VDS=-80V, VGS=0V, T=125°C(2)VDS=-25 V, VGS=-10VVGS=-10V,ID=-150mAVDS=-25V,ID=-150mAmAΩStatic Drain-Source On-StateRDS(on)Resistance (1)Forward Transconductance(1)(2)Input Capacitance (2)Common Source OutputCapacitance (2)Reverse TransferCapacitance (2)Turn-On Delay Time (2)(3)Rise Time (2)(3)Turn-Off Delay Time (2)(3)Fall Time (2)(3)gfsCissCossCrsstd(on)trtd(off)tfmSpFpFpFnsnsnsnsVDS=-25V, VGS=0V, f=1MHzVDD ≈-25V, ID=-150mA(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%(2) Sample test.

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Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

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ZVP3310ATYPICAL CHARACTERISTICSVGS=-20V-16V-12VVGS=-20V-16V-14V-12V-10V-9V-8V-7V-0.2-6V-5V 0-2-4-6-8-4V-10 ID - Drain Current (Amps)-0.6-9V-0.4-8V-7V-0.2-6V-5V-4.5V-4V-3.5V0-10-20-30-40-50 ID - Drain Current (Amps)-10V-0.6-0.4 0VDS - Drain Source Voltage (Volts)VDS - Drain Source Voltage (Volts)Output Characteristics Saturation Characteristics -10VDS-Drain Source Voltage (Volts) ID - Drain Current (Amps)-0.6-8-6ID=-0.3A-0.15A-0.075A 00-2-4-6-8-10-0.4VDS=-10V-4-0.2-2 00-2-4-6-8-10VGS-Gate Source Voltage (Volts)VGS-Gate Source Voltage (Volts)Voltage Saturation Characteristics RDS(on)-Drain Source On Resistance (Ω) -5V-6V-7V -8V -10V Transfer Characteristics VGS=-4V 1002.6Normalised RDS(on)and VGS(th) 2.42.22.01.81.61.41.21.00.80.6-40-200VGS=-10VID=-150mA 50-20V -VGS=VDSainDrID=-1mAGate Threshold Voltage VGS(THe RceruSo ceantsis) onS(DR) 10-10-100-100020406080100120140160180ID-Drain Current (mA)Tj-Junction Temperature (°C) On-resistance v drain current Normalised RDS(on)and VGS(th)v Temperature3-433

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ZVP3310ATYPICAL CHARACTERISTICS100100gfs-Transconductance (mS) 9080706050403020 10 00-0.1-0.2-0.3-0.4-0.5-0.6-0.7-0.8VDS=-10Vgfs-Transconductance (mS) 9080706050403020 10 00-1-2-3-4-5-6-7-8-9-10 VDS=-10VID- Drain Current (Amps)VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage 50403020 10 00-10-20-30-40-50-60VGS=0Vf=1MHzVGS-Gate Source Voltage (Volts) 0-2-4-6-8-10-12-14-1600.10.20.30.40.50.60.70.80.91.01.11.2VDS= -25V-50V -100V ID=- 0.2AC-Capacitance (pF) CissCossCrss-70-80VDS-Drain Source Voltage (Volts)Q-Charge (nC)Capacitance v drain-source voltage Gate charge v gate-source voltage 3-434