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PN4141_02资料

2023-03-09 来源:星星旅游
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PN4141PN4141

NPN General Purpose Amplifier

•This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA.

1

TO-92

1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings* TA=25°C unless otherwise noted

SymbolVCEOVCBOVEBOICTJ, TSTG

Collector-Emitter VoltageCollector-Base VoltageEmitter-Base VoltageCollector Current

- Continuous

Operating and Storage Junction Temperature Range

Parameter

Value30605.0500- 55 ~ 150

UnitsVVVmA°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.

NOTES:

1.These ratings are based on a maximum junction temperature of 150 degrees C.

2.These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics TA=25°C unless otherwise noted

Symbol

Parameter

Test Condition

IC = 10mA, IB = 0IC = 10µA, IE = 0IE = 10µA, IC = 0VCB = 40V, VOB = 3.0VVCB = 40V, VOB = 3.0VVCE = 10V, IC = 100µAVCE = 10V, IC = 1.0mAVCE = 10V, IC = 10mAVCE = 10V, IC = 150mAVCE = 10V, IC = 500mAVCE = 1.0V, IC = 150mAIC = 150mA, IB = 15mAIC = 500mA, IB = 50mAIC = 150mA, IB = 15mAIC = 500mA, IB = 50mAVCB = 10V, f = 100KHz

IC = 20mA, VCE = 20V, f = 100MHzVCC = 30V, IC = 150mAIB1 = 15mA, VOB(off) = 0.5VVCC = 30V, IC = 150mAIB1 = IB2 = 15mA

2.5

1040250

nsnsnsns

3550751003050Min.30605.0

5050Max.

UnitsVVVnAnA

Off Characteristics

Collector-Emitter Breakdown Voltage *V(BR)CEOV(BR)CBOV(BR)EBOICEXIBL

Collector-Base Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cut-off CurrentBase Cutoff Current

On Characteristics

DC Current GainhFE

300

VCE(sat)VBE(sat)

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

0.4

1.61.32.68.0

VVVVpF

Small Signal Characteristics

Output CapacitanceCobhfetdtrts

Small Signal Current GainDelay TimeRise TimeStorage Time

Switching Characteristics

tf

Fall Time2.560

* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%

©2002 Fairchild Semiconductor CorporationRev. B, November 2002

元器件交易网www.cecb2b.com

PN4141Thermal Characteristics TA=25°C unless otherwise noted

SymbolPDRθJCRθJA

Total Device DissipationDerate above 25°C

Thermal Resistance, Junction to CaseThermal Resistance, Junction to Ambient

Parameter

Max.6255.083.3200

UnitsmWmW/°C°C/W°C/W

©2002 Fairchild Semiconductor CorporationRev. B, November 2002

元器件交易网www.cecb2b.com

PN4141Package DimensionsTO-924.58–0.15+0.250.46 ±0.1014.47 ±0.404.58 ±0.201.27TYP[1.27 ±0.20]3.60 ±0.201.27TYP[1.27 ±0.20]0.38–0.05+0.103.86MAX1.02 ±0.100.38–0.05+0.10(R2.29)(0.25)Dimensions in Millimeters©2002 Fairchild Semiconductor Corporation

Rev. B, November 2002

元器件交易网www.cecb2b.com

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such trademarks.

ACEx™FACT™ActiveArray™FACT Quiet series™Bottomless™FAST®

FASTr™CoolFET™

CROSSVOLT™FRFET™

GlobalOptoisolator™DOME™

EcoSPARK™GTO™2CMOS™EHiSeC™EnSigna™I2C™

Across the board. Around the world.™The Power Franchise™

Programmable Active Droop™DISCLAIMER

ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC®OPTOPLANAR™PACMAN™POP™

Power247™PowerTrench®QFET™QS™

QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™

SILENT SWITCHER®SMART START™

SPM™Stealth™

SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™

TruTranslation™UHC™UltraFET®VCX™

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.As used herein:

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

Datasheet IdentificationAdvance Information

Product StatusFormative or In DesignFirst Production

Definition

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Preliminary

No Identification NeededFull Production

ObsoleteNot In Production

©2002 Fairchild Semiconductor CorporationRev. I1

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