专利名称：CAPACITOR FOR SEMICONDUCTOR DEVICE
AND METHOD FOR FABRICATING THE SAME
发明人：Seung-Min Lee申请号：US12267566申请日：20081108
公开号：US20090127655A1公开日：20090521
专利附图：
摘要：A capacitor for the semiconductor device may include a bottom electrodeformed over a semiconductor substrate, a dielectric film pattern formed over the bottomelectrode, an insulating member formed over a peripheral portion of the top surface of
the dielectric film pattern, and a top electrode formed over the insulating member anddielectric film pattern. Capacitor properties are improved and capacitor values aremaintained as constant by reducing a parasitic capacitance generated from edges of acapacitor electrode. Therefore, embodiments make it possible to improve semiconductordevice properties and yields.
申请人：Seung-Min Lee
地址：Namyangiu-si KR
国籍：KR
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