L6114L6115
QUAD 100 V, DMOS SWITCH
......
OUTPUT VOLTAGE TO 100 V0.7 Ω RDS(ON)
SUPPLY VOLTAGE UP TO 60 VLOW INPUT CURRENT
TTL/CMOS COMPATIBLE INPUTS
HIGH SWITCHING FREQUENCY (200 KHz)
MULTIPOWER BCD TECHNOLOGY
Powerdip 14 + 3 + 3DESCRIPTION
Realized with the Multipower-BCD mixed bipo-lar/CMOS/DMOS process, the L6114/15 monolithicquad DMOS switch is designed for high current,high voltage switching applications. Each of the fourswitches is controlled by a logic input and all four arecontrolled by a common enable input. All inputs areTTL/CMOS compatible for direct connection to logiccircuits. Each source is available for the insertion ofthe sense resistors in current control applications.Two versions are available : the L6114 mounted ina Powerdip 14+3+3 package and the L6115 in a 15-lead Multiwatt package.
PIN CONNECTIONS (top view)
Multiwatt-15ORDERING NUMBERS : L6114 (Powerdip) L6115 (Multiwatt-15)L6115 (Multiwatt-15)L6114 (Powerdip)1/11
April 1993
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BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
SymbolVDSVCCIDIDM (*)ISDISDMVINVENVS Ptot Drain-source VoltageSupply VoltageContinuous Drain CurrentPulsed Drain CurrentContinuous Source-drainDiode CurrentPulsed Source Drain Diode CurrentInput VoltageEnable VoltageSource VoltageTotal Power Dissipation@ Tpins = 90 °C@ Tcase = 90 °C@ Tamb = 70 °C@ Tamb = 70 °CPowerdipMultiwatt –15PowerdipMultiwatt –15@<0>Tpins = 90 °C@<0>Tcase = 90 °C@<0>Tpins = 90 °C@<0>Tcase = 90 °CPowerdipMultiwatt –15PowerdipMultiwatt –15PowerdipMultiwatt –15PowerdipMultiwatt –15ParameterValue100601.53581.535877– 1 to + 44.3201.32.3– 40 to + 150UnitVVAAAAAAAAVVVWWWW°CTstg, TjStorage and Junction Temperature Range(*) Pulse width ≤ 300 µs, duty cycle ≤ 10 %.Note : ID, IDM, ISD, ISDM are given per channel.THERMAL DATA
SymbolRth j-pinsRth j-caseRth j-ambParameterThermal Resistance Junction-pinsThermal Resistance Junction-caseThermal Resistance Junction-ambientMax.Max.Max.Powerdip14-65Multiwatt–15-335UnitoooC/WC/WC/W元器件交易网www.cecb2b.com
ELECTRICAL CHARACTERISTICS (Tj = 25oC, VCC = 40V, unless otherwise specified)
SymbolVCCICCIQBVDSSIDSSRDS (on) (*)VIN L, VEN LVIN H, VEN HIIN L, IEN LIIN H, IEN Htd (on)trtd (off)tfVSD (*)VSD (on) (*)ParameterSupply VoltageSupply CurrentAll VIN = HVEN = Square Wave(200kHz, 50 % DC)VEN = LID = 1mA, VEN = LVEN = LVDS = 100VVDS = 80V, Tj = 125°CVCC ≥ 14V, ID = 1.5AVEN, VIN = H– 0.32VIN, VEN = LVIN, VEN = HID = 1.5ASee Test Circuit andWaveformsISD = 1.5A, VEN = LISD = 1.5A - VIN, VEN = H3001004001001.51.21001Test ConditionsMin.149Typ.Max.48UnitVmAQuiescent CurrentDrain Source Breakdown VoltageOutput Leakage Current23mAVmA10.7Static Drain-source on ResistanceInput Low VoltageInput High VoltageInput Low CurrentInput High CurrentTurn on Delay TimeRise TimeTurn off Delay TimeFall TimeSource Drain Diode Forward VoltageSource Drain Forward VoltageΩ0.87– 10010VVµAµAnsnsnsnsVV(*) Pulse test : pulse width = 300 µs, duty cycle = 2 %.元器件交易网www.cecb2b.com
SWITCHING TIMES RESISTIVE LOADFigure 1 : Test Circuit
(Pins x = Powerdip ; Pins (x) = Multiwatt).
Figure 2 : Waveforms.
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TEST CIRCUIT (Pins x = Powerdip ; Pins (x) = Multiwatt)Figure 3 : Quiescent Current and Output
Leakage Current..
Figure 4 : Supply Current.
VEN = 0.8 VVIN = 2 VVEN = square wave f = 200 KHz{ DC = 50 %Figure 5 : RDS (on).Figure 6 : Source-drain Diode Forward Voltage.
VCC = 14 V,VIN = 2 V,f = 3 KHzID = square wave,(*) VDS is taken during the time in which theVDSID = 1.5 ARDS =1.5ISD square wave, f = 3 KHzVIN = 2 V,VEN = 2VDC = 2 %--Set VEN = 0.8 V for VSD (taken during the time in whichISD = 1.5 A)Set VEN = 2 V for VSD (on) (taken during the time in whichISD = 1.5 A)DC = 2 %元器件交易网www.cecb2b.com
Figure 7 : Input Logic Levels
SetSetSetSetV = 0.8 VV = 0.8 VV = 2 V V = 2 V S1,S2 open S1,S2 close S1,S2 open S1,S2 closeforforforfor IIN L and IEN L VIN L and VEN H IIN H and IEN H VIN H and VEN HFigure 8 : Static Drain-source on Resistance.
Figure 9 : Normalized Break-down Voltage vs.
Temperature.
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Figure 10 :Normalized on Resistance vs.
Temperature.Figure 11 :Typical Source-drain Diode Forward
Voltage.
Figure 12 :Rth j-amb vs. Dissipated Power(Multiwatt).
(*) Rth ≈ 9 °C/W.
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Figure 13 : Transient Thermal Resistance for Single Pulses (Multiwatt).
Figure 14 : Peak Transient Thermal Resistance vs.Pulse width and duty cycle (Multiwatt).
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POWERDIP20 PACKAGE MECHANICAL DATA
DIM.MIN.a1Bbb1DEee3FILZ3.301.278.802.5422.867.105.100.1300.0500.380.510.850.500.5024.800.3460.1000.9000.2800.2010.0151.40mmTYP.MAX.MIN.0.0200.0330.0200.0200.9760.055inchTYP.MAX.元器件交易网www.cecb2b.com
MULTIWATT15 PACKAGE MECHANICAL DATA
DIM.ABCDEFGG1H1H2LL1L2L3L4L7MM1SS1Dia122.12217.6517.2510.32.654.24.51.91.93.6517.510.74.35.0810.490.661.1417.5719.620.222.622.518.117.7510.92.94.65.32.62.63.850.8700.8660.6950.6790.4060.1040.1650.1770.0750.0750.1440.6890.4210.1690.2001.2717.780.550.751.417.910.0190.0260.0450.6920.7720.7950.8900.8860.7130.6990.4290.1140.1810.2090.1020.1020.1520.0500.700mmMIN.TYP.MAX.52.651.60.0390.0220.0300.0550.705MIN.inchTYP.MAX.0.1970.1040.063元器件交易网www.cecb2b.com
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility forthe consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from itsuse. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifica-tions mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information pre-viously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices orsystems without express written approval of SGS-THOMSON Microelectronics.
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